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HYB18T512400BF-5 参数 Datasheet PDF下载

HYB18T512400BF-5图片预览
型号: HYB18T512400BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位双数据速率 - 双SDRAM的 [512-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 57 页 / 2915 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18T512xxxBF–[2.5…5]  
512-Mbit Double-Data-Rate-Two SDRAM  
5.4  
Output Buffer Characteristics  
Table 28  
Symbol  
IOH  
SSTL_18 Output DC Current Drive  
Parameter  
SSTL_18  
–13.4  
Unit  
mA  
mA  
Note  
1)2)  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
3)  
IOL  
13.4  
1) VDDQ = 1.7 V; VOUT = 1.42 V. (VOUTVDDQ) / IOH must be less than 21 Ohm for values of VOUT between VDDQ and  
DDQ – 280 mV.  
V
2) The values of IOH(dc) and IOL(dc) are based on the conditions given in and . They are used to test drive current capability to  
ensure VIH.MIN. plus a noise margin and VIL.MAX minus a noise margin are delivered to an SSTL_18 receiver. The actual  
current values are derived by shifting the desired driver operating points along 21 Ohm load line to define a convenient  
current for measurement.  
3) VDDQ = 1.7 V; VOUT = 280 mV. VOUT / IOL must be less than 21 Ohm for values of VOUT between 0 V and 280 mV.  
Table 29  
Symbol  
VOH  
SSTL_18 Output AC Test Conditions  
Parameter  
SSTL_18  
Unit  
V
Note  
1)  
Minimum Required Output Pull-up  
Maximum Required Output Pull-down  
Output Timing Measurement Reference Level  
VTT + 0.603  
VTT – 0.603  
0.5 × VDDQ  
VOL  
V
VOTR  
V
1) SSTL_18 test load for VOH and VOL is different from the referenced load. The SSTL_18 test load has a 20 Ohm series  
resistor additionally to the 25 Ohm termination resistor into VTT. The SSTL_18 definition assumes that ± 335 mV must be  
developed across the effectively 25 Ohm termination resistor (13.4 mA × 25 Ohm = 335 mV). With an additional series  
resistor of 20 Ohm this translates into a minimum requirement of 603 mV swing relative to VTT, at the ouput device (13.4  
mA × 45 Ohm = 603 mV).  
Table 30  
OCD Default Characteristics  
Description  
Symbol  
Min.  
0
Nominal  
Max.  
Unit  
Note  
1)2)  
Output Impedance  
Ohms  
Ohms  
Ohms  
3)  
4)  
Pull-up / Pull down mismatch  
4
Output Impedance step size  
for OCD calibration  
0
1.5  
5)6)7)  
SOUT  
Output Slew Rate  
1.5  
5.0  
V / ns  
1) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V  
2) Impedance measurement condition for output source dc current: VDDQ = 1.7 V, VOUT = 1420 mV;  
(VOUTVDDQ) / IOH must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ – 280 mV. Impedance  
measurement condition for output sink dc current: VDDQ = 1.7 V; VOUT = –280 mV; VOUT / IOL must be less than 23.4 Ohms  
for values of VOUT between 0 V and 280 mV.  
3) Mismatch is absolute value between pull-up and pull-down, both measured at same temperature and voltage.  
4) This represents the step size when the OCD is near 18 ohms at nominal conditions across all process parameters and  
represents only the DRAM uncertainty. A 0 Ohm value (no calibration) can only be achieved if the OCD impedance is 18  
± 0.75 Ohms under nominal conditions.  
5) The absolute value of the Slew Rate as measured from DC to DC is equal to or greater than the Slew Rate as measured  
from AC to AC. This is verified by design and characterization but not subject to production test.  
6) Timing skew due to DRAM output Slew Rate mis-match between DQS / DQS and associated DQ’s is included in tDQSQ and  
t
QHS specification.  
7) DRAM output Slew Rate specification applies to 400, 533 and 667 MT/s speed bins.  
Internet Data Sheet  
29  
Rev. 1.05, 2007-01  
03292006-YBYM-WG0Z  
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