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HYB18T1G160AF-5 参数 Datasheet PDF下载

HYB18T1G160AF-5图片预览
型号: HYB18T1G160AF-5
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA92, ROHS COMPLIANT, PLASTIC, TFBGA-92]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 53 页 / 2560 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18T1G[40/80/16]0AF(L)–[3S/3.7/5]  
1-Gbit DDR2 SDRAM  
Operating Conditions  
Table 27  
OCD Default Characteristics  
Symbol Description  
Min.  
Nominal  
Max.  
Unit  
Note  
1)2)  
Output Impedance  
Ohms  
Ohms  
Ohms  
3)  
4)  
Pull-up / Pull down mismatch  
0
0
4
Output Impedance step size  
for OCD calibration  
1.5  
5)6)7)8)  
SOUT  
Output Slew Rate  
1.5  
5.0  
V / ns  
1) Absolute Specifications (TOPER; VDD = 1.8 V ± 0.1 V; VDDQ = 1.8 V ± 0.1 V), altering OCD from default state no longer  
requires DRAM to meet timing, voltage and slew rate specifications on I/O’s.  
2) Impedance measurement condition for output source dc current: VDDQ = 1.7 V, VOUT = 1420 mV;  
(VOUTVDDQ) / IOH must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ – 280 mV. Impedance  
measurement condition for output sink dc current: VDDQ = 1.7 V; VOUT = –280 mV; VOUT / IOL must be less than 23.4 Ohms  
for values of VOUT between 0 V and 280 mV.  
3) Mismatch is absolute value between pull-up and pull-down, both measured at same temperature and voltage.  
4) This represents the step size when the OCD is near 18 ohms at nominal conditions across all process parameters and  
represents only the DRAM uncertainty. A 0 Ohm value (no calibration) can only be achieved if the OCD impedance is  
18 ± 0.75 Ohms under nominal conditions.  
5) Slew Rates according to VIL(ac) to VIH(ac) with the load specified in Figure 72.  
6) The absolute value of the Slew Rate as measured from DC to DC is equal to or greater than the Slew Rate as measured  
from AC to AC. This is verified by design and characterization but not subject to production test.  
7) Timing skew due to DRAM output Slew Rate mis-match between DQS / DQS and associated DQ’s is included in tDQSQ and  
t
QHS specification.  
8) DRAM output Slew Rate specification applies to 400 and 533 speed bins.  
Input / Output Capacitance  
Table 28  
Symbol  
Input / Output Capacitance  
Parameter  
DDR2-400 &  
DDR-2-533  
DDR2-667  
Unit  
Min.  
1.0  
Max.  
Min.  
1.0  
Max.  
CCK  
CDCK  
CI  
Input capacitance, CK and CK  
2.0  
2.0  
pF  
pF  
pF  
pF  
pF  
Input capacitance delta, CK and CK  
Input capacitance, all other input-only pins  
Input capacitance delta, all other input-only pins  
0.25  
2.0  
0.25  
2.0  
1.0  
1.0  
CDI  
CIO  
0.25  
4.0  
0.25  
3.5  
Input/output capacitance,  
2.5  
2.5  
DQ, DM, DQS, DQS, RDQS, RDQS  
CDIO  
Input/output capacitance delta,  
0.5  
0.5  
pF  
DQ, DM, DQS, DQS, RDQS, RDQS  
Internet Data Sheet  
29  
Rev. 1.31, 2007-01  
03292006-1X3H-6X8S  
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