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HYB18T1G160AF-5 参数 Datasheet PDF下载

HYB18T1G160AF-5图片预览
型号: HYB18T1G160AF-5
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA92, ROHS COMPLIANT, PLASTIC, TFBGA-92]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 53 页 / 2560 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18T1G[40/80/16]0AF(L)–[3S/3.7/5]  
1-Gbit DDR2 SDRAM  
Operating Conditions  
Overshoot and Undershoot Specification  
Table 29  
AC Overshoot / Undershoot Specification for Address and Control Pins  
Parameter  
DDR2-400  
DDR2-533  
0.9  
DD2-667  
0.9  
Unit  
V
Maximum peak amplitude allowed for overshoot area 0.9  
Maximum peak amplitude allowed for undershoot area 0.9  
0.9  
0.9  
V
Maximum overshoot area above VDD  
Maximum undershoot area below VSS  
1.33  
1.33  
1.00  
0.80  
0.80  
V.ns  
V.ns  
1.00  
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9''  
966  
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Figure 6  
AC Overshoot / Undershoot Diagram for Address and Control Pins  
Table 30  
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins  
Parameter  
DDR2-400  
DDR2-533  
0.9  
DD2-667  
0.9  
Unit  
V
Maximum peak amplitude allowed for overshoot area 0.9  
Maximum peak amplitude allowed for undershoot area 0.9  
0.9  
0.9  
V
Maximum overshoot area above VDDQ  
Maximum undershoot area below VSSQ  
0.38  
0.38  
0.28  
0.23  
0.23  
V.ns  
V.ns  
0.28  
Internet Data Sheet  
30  
Rev. 1.31, 2007-01  
03292006-1X3H-6X8S  
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