HYB18H512321AF
512-Mbit GDDR3
Electrical Characteristics
5.10
Operating Currents
5.10.1
Operating Current Ratings ( HYB18H512321AF–12/14/16/20 )
Table 35
Operating Current Ratings ( 0 °C ≤ Tc ≤ 85 °C)
Parameter
Symbol
Values
–16
Unit Notes
–12
typ.
498
463
271
–14
typ.
453
425
243
–20
typ.
362
348
186
typ.
406
383
Operating Current
Operating Current
Precharge Power-Down
Standby Current
IDD0
IDD1
IDD2P
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
215
Precharge Floating Standby
Current
Precharge Quiet Standby
Current
Active Power-Down Standy
Current
Active Standby Current
Operating Current Burst Read IDD4R
Operating Current Burst Write IDD4W
Auto-Refresh Current
(tRC=min(tRFC))
IDD2F
IDD2Q
IDD3P
IDD3N
352
319
272
316
287
244
280
254
216
243
221
187
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
456
805
641
587
411
725
581
548
364
642
511
500
317
558
445
409
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
IDD5B
Auto-Refresh Current at tREFI IDD5D
Self Refresh Current
Operating Current
408
8
733
366
8
703
324
8
671
281
8
641
mA 1),2),3)
mA 1),2),3),4)
mA 1),2),3)
IDD6
IDD7
1) IDD specifications are tested after the device is properly initialized.
2) Input slew rate = 3V/ns.
3) Measured with Output open and On Die termination off.
4) Enables on-chip refresh and address counter.
Data Sheet
88
Rev. 1.73, 2005-08
05122004-B1L1-JEN8
QIMONDA [ QIMONDA AG ]
