HYB18H512321AF
512-Mbit GDDR3
Electrical Characteristics
5.8
Termination IV Characteristic at 120 Ohms
Figure 68 represents the DQ or ADD/CMD termination Pull-Up IV characteristic under process, voltage and
temperature best and worst case conditions. The actual termination Pull-Up current must lie between these two
bounding curves. The value of the external ZQ resistor is 240 Ω, setting the nominal termination impedance to
120 Ω. (Extended Mode Register programmed to ZQ/2 for DQ terminations or CKE = 0 at the RES transition during
Power-Up for ADD/CMD terminations).
120 Ohm Termination Characterstics
0,0
0,5
1,0
1,5
2,0
0
-2
-4
-6
-8
-10
-12
-14
-16
VDDQ - Vout (V)
Figure 68 120 Ohm Active Termination Characteristics
Table 33 lists the numerical values of the minimum and maximum allowed values of the termination IV
characteristic.
Table 33
Programmed Terminator Characteristics af 120 Ohm
Voltage (V)
Terminator Pull-Up Current
(mA)
Voltage (V)
Terminator Pull-Up Current
(mA)
Minimum
-0.81
-1.60
-2.34
-3.06
-3.74
-4.39
-5.00
-5.58
-6.12
-6.63
Maximum
-1.09
-2.14
-3.15
-4.12
-5.06
-5.94
-6.79
-7.59
-8.35
-9.06
Minimum
-7.11
-7.57
-8.02
-8.47
-8.91
-9.35
-9.79
-10.22
—
Maximum
-9.72
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-10.42
-11.00
-11.67
-12.33
-13.05
-13.75
-14.43
-15.08
-15.69
—
Data Sheet
86
Rev. 1.73, 2005-08
05122004-B1L1-JEN8
QIMONDA [ QIMONDA AG ]
