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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Electrical Characteristics  
5.7.2  
Termination IV Characteristic at 60 Ohms  
Figure 67 represents the DQ termination Pull-Up IV characteristic under process, voltage and temperature best  
and worst case conditions. The actual DQ termination Pull-Up current must lie between these two bounding  
curves. The value of the external ZQ resistor is 240 , setting the nominal DQ termination impedance to 60 .  
(Extended Mode Register programmed to ZQ/4).  
60 Ohm Termination Characterstics  
0,0  
0,5  
1,0  
1,5  
2,0  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
VDDQ - Vout (V)  
Figure 67 60 Ohm Active Termination Characteristic  
Table 32 lists the numerical values of the minimum and maximum allowed values of the output driver termination  
IV characteristic.  
Table 32  
Programmed Terminator Characteristics at 60 Ohm  
Voltage (V)  
Terminator Pull-Up Current  
(mA)  
Voltage (V)  
Terminator Pull-Up Current  
(mA)  
Minimum  
-1.63  
-3.19  
-4.69  
-6.12  
-7.49  
-8.78  
-10.01  
-11.16  
-12.25  
-13.27  
Maximum  
-2.18  
-4.28  
-6.30  
-8.25  
-10.11  
-11.89  
-13.58  
-15.19  
-16.69  
-18.11  
Minimum  
-14.23  
-15.14  
-16.04  
-16.94  
-17.82  
-18.70  
-19.58  
-20.44  
Maximum  
-19.45  
-20.83  
-22.00  
-23.33  
-24.67  
-26.09  
-27.50  
-28.86  
-30.15  
-31.38  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
1.6  
1.7  
1.8  
1.9  
2.0  
Data Sheet  
85  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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