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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Functional Description  
0
1
2
3
4
5
6
7
8
9
CLK#  
CLK  
Com  
WR  
B/C  
DES  
DES  
DES  
DES  
DES  
PRE  
B
DES  
DES  
DES  
.
Addr.  
WR  
B/C  
DES  
DES  
DES  
DES  
DES  
DES  
PRE  
B
DES  
DES  
WL = 3  
tWR  
tRP  
WDQS  
DQ  
D0  
D1  
D2  
D3  
WR  
B/C  
DES  
DES  
DES  
DES  
DES  
DES  
DES  
PRE  
B
DES  
tWR  
tRP  
WL = 4  
WDQS  
DQ  
D0  
D1  
D2  
D3  
B / C: Bank / Column address  
Com.: Command  
Don't Care  
WR:  
PRE:  
Dx#:  
Dy#:  
WRITE  
Addr.: Address B / C  
PRECHARGE  
Data to B / Cx  
Data to B / Cy  
WL:  
Write Latency  
DES: Deselect  
Figure 62 Write followed by Precharge  
4.14.4  
Reads (RD) in DLL off mode  
Definition of read latency in DLL off mode is different from DLL on mode. Since in DLL off mode the read data is  
not synchronized to the CLK, the internal access time to the memory array becomes visible. Read data in DLL off  
mode appears on the I/O balls after (CL - 1) + tAC. CL is the value for the read latency which is set in the Mode  
Register.  
Data Sheet  
76  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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