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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Functional Description  
4.12  
Self-Refresh Exit (SREFEX)  
To exit the Self Refresh Mode, a stable external clock  
is needed before setting CKE high asynchronously.  
Once the Self-Refresh Exit command is registered, a  
delay equal or longer than tXSC must be satisfied before  
any command can be applied. During this time, the DLL  
is automatically enabled, reset and calibrated.  
CLK#  
CLK  
CKE  
CKE must remain HIGH for the entire Self-Refresh exit  
period and commands must be gated off with CS held  
HIGH. Alternately, NOP commands may be registered  
on each positive clock edge during the Self Refresh exit  
interval.  
CS#  
RAS#  
CAS#  
WE#  
A0-A11  
A9-A11  
Don't Care  
Figure 56 Self Refresh Exit Command  
CLK#  
CLK  
Command  
CKE  
N / D  
N / D  
N / D  
A.C.  
tXSC  
CLK, CLK# must  
be stable  
A.C.: Any Command  
N / D: NOP or DESEL Command  
Don't Care  
Figure 57 Self Refresh Exit  
Data Sheet  
72  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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