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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Functional Description  
4.10  
Auto Refresh Command (AREF)  
AREF is used to do a refresh cycle on one row in each  
bank. The addresses are generated by an internal  
refresh controller; external address pins are “DON’T  
CARE”. All banks must be idle before the AREF  
command can be applied. The delay between the  
AREF command and the next ACT or subsequent  
AREF must be at least tRFC(min). The refresh period  
starts when the AREF command is entered and ends  
tRFC later at which time all banks will be in the idle state.  
CLK#  
CLK  
CKE  
CS#  
Within a period of tREF the whole memory has to be  
RAS#  
CAS#  
refreshed. The average periodic interval time from  
AREF to AREF is then tREFI  
.
To improve efficiency bursts of AREF commands can  
be used. Such bursts may consist of maximum 8 AREF  
commands. tRFC(min) is the minimum required time  
between two AREF commands inside of one AREF  
burst. According to the number of AREF commands in  
one burst the average required time from one AREF  
burst to the next can be increased. Example: If the  
AREF bursts consists of 8 AREF commands, the  
average time from one AREF burst to the next is 8*  
WE#  
A0-A11  
BA: Bank Address  
Don't Care  
BA0-BA2  
tREFI  
.
Figure 52 Auto Refresh Command  
The AREF command generates an update of the OCD  
output impedance and of the addresses, commands  
and DQ terminations. The timing parameter tKO (see  
Chapter 4.2.2 must be met.  
CLK#  
CLK  
Command  
CKE  
PRE  
ARF  
NOP  
A.C.  
NOP  
ARF  
NOP  
tRP  
tRFC  
A.C.: AREF or ACT Command  
ARF: Auto Refresh  
tREFI  
Don't Care  
Figure 53 Auto Refresh Cycle  
Data Sheet  
70  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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