TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
001aab207
001aab208
20
100
(2)
(1)
P
η
tot
(%)
(W)
16
(3)
(1)
80
(2)
(3)
12
8
60
40
20
0
4
0
10
−2
−1
2
3
10
1
10
10
10
(W)
0
40
80
120
160
200
P (W)
o
P
o
f = 1 kHz.
f = 1 kHz.
(1) VP = ±21 V; 1 × 8 Ω BTL configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(3) VP = ±26 V; 2 × 8 Ω SE configuration.
(1) VP = ±26 V; 2 × 8 Ω SE configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(3) VP = ±21 V; 1 × 8 Ω BTL configuration.
Fig 18. Power dissipation as a function of total output
power.
Fig 19. Efficiency as a function of total output power.
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001aab210
120
200
P
o
(W)
160
P
o
(W)
(1)
80
120
80
40
0
(1)
(2)
(3)
(2)
(3)
40
0
10
15
20
25
30
35
10
15
20
25
30
35
V
(V)
V (V)
S
S
(THD + N)/S = 0.5 %; f = 1 kHz.
(1) 1 × 8 Ω BTL configuration.
(2) 2 × 6 Ω SE configuration.
(3) 2 × 8 Ω SE configuration.
(THD + N)/S = 10 %; f = 1 kHz.
(1) 1 × 8 Ω BTL configuration.
(2) 2 × 6 Ω SE configuration.
(3) 2 × 8 Ω SE configuration.
Fig 20. Output power as a function of supply voltage;
(THD + N)/S = 0.5 %.
Fig 21. Output power as a function of supply voltage;
(THD + N)/S = 10 %.
9397 750 13357
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 October 2004
23 of 32
NXP [ NXP ]
