TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
001aab211
001aab212
45
45
G
G
(dB)
(dB)
40
35
30
25
20
40
(1)
(1)
35
30
25
20
(2)
(3)
(2)
(3)
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Vi = 100 mV; Rs = 5.6 kΩ; Ci = 330 pF.
(1) VP = ±21 V; 1 × 8 Ω BTL configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(3) VP = ±26 V; 2 × 8 Ω SE configuration.
Vi = 100 mV; Rs = 0 Ω; Ci = 330 pF.
(1) VP = ±21 V; 1 × 8 Ω BTL configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(3) VP = ±26 V; 2 × 8 Ω SE configuration.
Fig 22. Gain as a function of frequency; Rs = 5.6 kΩ
Fig 23. Gain as a function of frequency; Rs = 0 Ω and
and Ci = 330 pF.
Ci = 330 pF.
001aab213
001aab214
0
10
V
o
SVRR
(dB)
(V)
1
−20
−1
10
−40
−2
−3
−4
−5
−6
10
10
10
10
10
(1)
−60
(2)
(3)
−80
−100
2
3
4
5
10
10
10
10
10
0
2
4
6
f (Hz)
V
(V)
mode
VP = ±26 V; Vripple = 2 V (p-p).
Vi = 100 mV; f = 1 kHz.
(1) Both supply lines rippled.
(2) Both supply lines rippled in anti phase.
(3) One supply line rippled.
Fig 24. SVRR as a function of frequency.
Fig 25. Output voltage as a function of mode voltage.
9397 750 13357
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 October 2004
24 of 32
NXP [ NXP ]
