TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
001aab203
001aab204
2
2
10
10
(THD + N)/S
(THD + N)/S
(%)
(%)
10
10
1
1
−1
−1
10
10
10
10
(1)
(2)
(1)
(2)
−2
−3
−2
10
−3
10
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = ±26 V; 2 × 8 Ω SE configuration.
VP = ±21 V; 1 × 8 Ω BTL configuration.
(1) Po = 10 W.
(2) Po = 1 W.
(1) Po = 10 W.
(2) Po = 1 W.
Fig 14. (THD + N)/S as function of frequency, SE
Fig 15. (THD + N)/S as function of frequency, BTL
configuration with 2 × 8 Ω load.
configuration with 8 Ω load.
001aab205
001aab206
0
0
α
α
cs
cs
(dB)
(dB)
−20
−20
−40
−60
−40
−60
(1)
(2)
(1)
(2)
−80
−80
−100
−100
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = ±26 V; 2 × 6 Ω SE configuration.
(1) Po = 10 W.
(2) Po = 1 W.
VP = ±26 V; 2 × 8 Ω SE configuration.
(1) Po = 10 W.
(2) Po = 1 W.
Fig 16. Channel separation as a function of frequency;
Fig 17. Channel separation as a function of frequency;
SE configuration with 2 × 6 Ω load.
SE configuration with 2 × 8 Ω load.
9397 750 13357
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 October 2004
22 of 32
NXP [ NXP ]
