Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
TDA8512J
handbook, full pagewidth
I(A)
20 ms
MGW430
current
in
output
stage
t (s)
short-circuit
50 µs
Fig.4 Short-circuit wave form.
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
supply voltage
MIN. MAX. UNIT
VP
operating
no signal
−
18
21
6
V
V
A
A
V
V
W
−
IOSM
IORM
Vsc
non-repetitive peak output current
repetitive peak output current
short-circuit safe voltage
reverse polarity voltage
total power dissipation
−
−
4
operating; note 1
−
18
6
Vrp
−
Ptot
Tstg
Tamb
Tvj
−
60
storage temperature
−55
−40
−
+150 °C
ambient temperature
+85
150
°C
°C
virtual junction temperature
Note
1. To ground and across load.
10 HANDLING
ESD protection of this device complies with the Philips’ General Quality Specification (GQS).
2001 Nov 16
7
NXP [ NXP ]
