Si9410DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 02 — 05 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si9410DY in SOT96-1 (SO8).
2. Features
■ Low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertors
■ DC motor control
■ Lithium-ion battery applications
■ Notebook PC
c
c
■ Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin
1
Description
n/c
Simplified outline
Symbol
d
s
8
5
2,3
4
source (s)
gate (g)
drain (d)
g
1
4
5,6,7,8
MBB076
Top view
MBK187
SOT96-1 (SO8)
1. TrenchMOS is a trademark of Royal Philips Electronics.
NXP [ NXP ]
