Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
R
th(j-a)
Thermal characteristics
Conditions
mounted on a printed circuit board;
minimum footprint, t
≤
10 s
Figure 4
Value Unit
50
K/W
thermal resistance from junction to ambient
Symbol Parameter
7.1 Transient thermal impedance
102
Zth(j-amb)
(K/W)
δ
= 0.5
0.2
10
0.1
0.05
0.02
03ae45
1
single pulse
P
δ
=
tp
T
tp
T
t
10-1
10
10
10-2
10-1
1
10
102
tp (s)
103
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 08238
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 05 July 2001
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