Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
03aa11
03aa19
120
Pder
(%)
100
120
Ider
(%)
100
80
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
175
o
Tamb ( C)
0
0
25
50
75
100
125
150
175
o
Tamb ( C)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
10 V
I
D
I
D
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
102
ID
(A)
10
tp = 10 µs
100 µs
1 ms
1
10 ms
03ae46
RDSon = VDS / ID
P
δ
=
tp
T
10-1
D.C.
100 ms
tp
T
t
10-2
10-1
1
10
VDS (V)
102
T
amb
= 25
°C;
I
DM
is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08238
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 05 July 2001
3 of 13
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