Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
j
= 25 to 150
°C
T
amb
= 25
°C;
pulsed: t
p
≤
10 s
T
amb
= 25
°C;
pulsed: tp
≤
10 s
V
GS
= 10 V; I
D
= 7 A
V
GS
= 5 V; I
D
= 4 A
V
GS
= 4.5 V; I
D
= 3.5 A
Typ
−
−
−
−
24
30
32
Max
30
7
2.5
150
30
40
50
Unit
V
A
W
°C
mΩ
mΩ
mΩ
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
amb
= 25
°C;
pulsed: tp
≤
10 s
T
amb
= 25
°C;
pulsed: tp
≤
10 s;
Figure 2
and
3
T
amb
= 70
°C;
pulsed: tp
≤
10 s;
Figure 2
T
amb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
amb
= 25
°C;
pulsed: tp
≤
10 s;
Figure 1
T
amb
= 70
°C;
pulsed: tp
≤
10 s;
Figure 1
Conditions
T
j
= 25 to 150
°C
Min
−
−
−
−
−
−
−
−55
−55
−
Max
30
±20
7
5.8
30
2.5
1.6
+150
+150
2.3
Unit
V
V
A
A
A
W
W
°C
°C
A
Source-drain diode
9397 750 08238
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 05 July 2001
2 of 13
PHILIPS [ NXP SEMICONDUCTORS ]
