Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
03ae47
03ae49
30
10V
ID
(A)
20
4.5 V
30
ID
(A)
20
25 ºC
Tj = 150 ºC
VDS > ID x RDSon
10
3V
10
0
0
0.5
1
1.5
VDS (V)
2
0
0
1
2
3
4
VGS (V)
5
T
j
= 25
°C
T
j
= 25
°C
and 150
°C;
V
DS
>
I
D
x R
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristic: drain current as a
function of gate-source voltage; typical values.
03ae48
0.04
RDSon
(Ω)
0.03
Tj = 25 ºC
VGS = 4.5 V
2
a
1.6
03ad57
1.2
0.02
10 V
0.8
0.01
0.4
0
0
10
20
ID (A)
30
0
-60
0
60
120
T
j
(ºC)
180
T
j
= 25
°C
R
DSon
a
=
---------------------------
-
R
°
DSon
(
25 C
)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08238
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 05 July 2001
6 of 13
PHILIPS [ NXP SEMICONDUCTORS ]
