PHP78NQ03LT
Philips Semiconductors
N-channel TrenchMOS logic level FET
003aaa169
003aaa171
60
0.06
RDSon
10 V 4.5 V
4 V
VGS = 3 V
3.5 V
ID
6 V
5 V
(
Ω
)
(A)
40
0.04
0.02
0
3.5 V
4 V
20
VGS = 3 V
5 V
10 V
6 V
0
0
0.5
1
1.5
2
0
20
40
60
V
DS (V)
ID (A)
Tj = 25 °C
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
003aaa170
03af18
40
2
VDS > ID x RDSon
ID
a
(A)
30
1.5
20
1
0.5
0
T = 25
C
175
C
°
j
°
10
0
1
2
3
4
-60
0
60
120
180
VGS (V)
T ( C)
°
j
Tj = 25 °C and 175 °C; VDS > ID × RDSon
RDSon
a =
----------------------------
RDSon(25 C)
°
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
9397 750 15086
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 9 June 2005
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