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PHP78NQ03LT 参数 Datasheet PDF下载

PHP78NQ03LT图片预览
型号: PHP78NQ03LT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道TrenchMOSTM逻辑电平FET [N-channel TrenchMOSTM logic level FET]
分类和应用:
文件页数/大小: 12 页 / 85 K
品牌: NXP [ NXP ]
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PHP78NQ03LT  
Philips Semiconductors  
N-channel TrenchMOS logic level FET  
003aaa169  
003aaa171  
60  
0.06  
RDSon  
10 V 4.5 V  
4 V  
VGS = 3 V  
3.5 V  
ID  
6 V  
5 V  
(
)
(A)  
40  
0.04  
0.02  
0
3.5 V  
4 V  
20  
VGS = 3 V  
5 V  
10 V  
6 V  
0
0
0.5  
1
1.5  
2
0
20  
40  
60  
V
DS (V)  
ID (A)  
Tj = 25 °C  
Tj = 25 °C  
Fig 5. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 6. Drain-source on-state resistance as a function  
of drain current; typical values  
003aaa170  
03af18  
40  
2
VDS > ID x RDSon  
ID  
a
(A)  
30  
1.5  
20  
1
0.5  
0
T = 25  
C
175  
C
°
j
°
10  
0
1
2
3
4
-60  
0
60  
120  
180  
VGS (V)  
T ( C)  
°
j
Tj = 25 °C and 175 °C; VDS > ID × RDSon  
RDSon  
a =  
----------------------------  
RDSon(25 C)  
°
Fig 7. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 8. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
9397 750 15086  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 05 — 9 June 2005  
6 of 12  
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