PHP78NQ03LT
Philips Semiconductors
N-channel TrenchMOS logic level FET
03aa33
03aa36
2.5
VGS(th)
(V)
10-1
ID
(A)
2
10-2
10-3
10-4
10-5
10-6
max
1.5
typ
min
typ
max
min
1
0.5
0
-60
0
60
120
180
0
1
2
3
T ( C)
VGS (V)
°
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aaa174
10
VGS
(V)
8
6
4
2
0
0
10
20
30
40
QG (nC)
ID = 50 A; VDS = 15 V
Fig 11. Gate-source voltage as a function of gate charge; typical values
9397 750 15086
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 9 June 2005
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