欢迎访问ic37.com |
会员登录 免费注册
发布采购

PHP78NQ03LT 参数 Datasheet PDF下载

PHP78NQ03LT图片预览
型号: PHP78NQ03LT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道TrenchMOSTM逻辑电平FET [N-channel TrenchMOSTM logic level FET]
分类和应用:
文件页数/大小: 12 页 / 85 K
品牌: NXP [ NXP ]
 浏览型号PHP78NQ03LT的Datasheet PDF文件第1页浏览型号PHP78NQ03LT的Datasheet PDF文件第2页浏览型号PHP78NQ03LT的Datasheet PDF文件第4页浏览型号PHP78NQ03LT的Datasheet PDF文件第5页浏览型号PHP78NQ03LT的Datasheet PDF文件第6页浏览型号PHP78NQ03LT的Datasheet PDF文件第7页浏览型号PHP78NQ03LT的Datasheet PDF文件第8页浏览型号PHP78NQ03LT的Datasheet PDF文件第9页  
PHP78NQ03LT  
Philips Semiconductors  
N-channel TrenchMOS logic level FET  
03aa16  
03aa24  
120  
120  
Ider  
(%)  
Pder  
(%)  
80  
80  
40  
0
40  
0
0
50  
100  
150  
200  
mb (°C)  
0
50  
100  
150  
200  
Tmb ( C)  
°
T
Ptot  
ID  
Pder  
=
× 100%  
Ider  
=
× 100%  
-----------------------  
-------------------  
P
I
°
°
tot(25 C)  
D(25 C)  
Fig 1. Normalized total power dissipation as a  
function of mounting base temperature  
Fig 2. Normalized continuous drain current as a  
function of mounting base temperature  
003aaa175  
103  
ID  
Limit RDSon = VDS / ID  
(A)  
t = 10  
p
s
µ
102  
100  
s
µ
DC  
1 ms  
10 ms  
10  
100 ms  
1
1
10  
102  
VDS (V)  
Tmb = 25 °C; IDM is single pulse; VGS = 5 V  
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
9397 750 15086  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 05 — 9 June 2005  
3 of 12  
 复制成功!