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PHP78NQ03LT 参数 Datasheet PDF下载

PHP78NQ03LT图片预览
型号: PHP78NQ03LT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道TrenchMOSTM逻辑电平FET [N-channel TrenchMOSTM logic level FET]
分类和应用:
文件页数/大小: 12 页 / 85 K
品牌: NXP [ NXP ]
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PHP78NQ03LT  
Philips Semiconductors  
N-channel TrenchMOS logic level FET  
3. Ordering information  
Table 2:  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PHP78NQ03LT  
SC-46  
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78  
TO-220AB  
4. Limiting values  
Table 3:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
25  
Unit  
V
VDS  
VDGR  
VGS  
ID  
drain-source voltage  
25 °C Tj 175 °C  
-
drain-gate voltage  
gate-source voltage  
drain current  
25 °C Tj 175 °C; RGS = 20 kΩ  
-
25  
V
-
±20  
61  
V
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3  
Tmb = 100 °C; VGS = 5 V; Figure 2  
Tmb = 25 °C; VGS = 10 V  
-
A
-
43  
A
-
75  
A
Tmb = 100 °C; VGS = 10 V  
-
53  
A
IDM  
Ptot  
Tstg  
Tj  
peak drain current  
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3  
Tmb = 25 °C; Figure 1  
-
228  
93  
A
total power dissipation  
storage temperature  
junction temperature  
-
W
°C  
°C  
55  
55  
+175  
+175  
Source-drain diode  
IS  
source (diode forward) current  
Tmb = 25 °C  
-
-
75  
A
A
ISM  
peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs  
228  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
avalanche energy  
unclamped inductive load; ID = 43 A;  
tp = 0.25 ms; VDD 25 V; RGS = 50 ;  
-
185  
mJ  
VGS = 10 V; starting at Tj = 25 °C  
9397 750 15086  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 05 — 9 June 2005  
2 of 12  
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