PHP78NQ03LT
Philips Semiconductors
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
PHP78NQ03LT
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
25
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
drain-gate voltage
gate-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
25
V
-
±20
61
V
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; VGS = 10 V
-
A
-
43
A
-
75
A
Tmb = 100 °C; VGS = 10 V
-
53
A
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
228
93
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
−55
−55
+175
+175
Source-drain diode
IS
source (diode forward) current
Tmb = 25 °C
-
-
75
A
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
228
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 43 A;
tp = 0.25 ms; VDD ≤ 25 V; RGS = 50 Ω;
-
185
mJ
VGS = 10 V; starting at Tj = 25 °C
9397 750 15086
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 9 June 2005
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