PHP78NQ03LT
Philips Semiconductors
N-channel TrenchMOS logic level FET
003aaa173
003aaa172
40
104
IS
(A)
C
30
20
(pF)
Ciss
103
175
C
°
T = 25 C
°
j
Coss
Crss
10
0
102
10-1
0
0.4
0.8
1.2
1.6
1
10
102
V
SD (V)
VDS (V)
Tj = 25 °C and 175 °C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
9397 750 15086
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 9 June 2005
8 of 12
NXP [ NXP ]
