Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
handbook, halfpage
160
MDA237
handbook, halfpage
160
MDA236
C
(pF)
120
C
(pF)
120
80
Ciss
80
Ciss
40
Coss
Crss
0
0
5
10
15
20
25
VDS (V)
0
0
−5
−10
−15
40
Coss
Crss
−20
−25
VDS (V)
f = 1 MHz; T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.12 Capacitance as a function of drain-source
voltage; N-channel typical values.
Fig.13 Capacitance as a function of drain-source
voltage; P-channel typical values.
handbook, halfpage
12
MDA242
50
V DS
(V)
40
35
VGS
(V )
handbook, halfpage
12
MDA243
50
V DS
( V)
40
35
V GS
( V)
10
10
8
30
6
( 1)
( 2)
8
30
6
(1)
(2 )
25
20
25
20
4
15
10
5
4
15
10
5
2
2
0
19 55
2 06 3
87
1 95
311
43 0
5 49
6 64
77 3
8 81
9 89
1311
1418
1526
10 97
12 03
1634
17 41
18 49
0
0
0
1639
17 46
18 53
19 60
2 06 7
Q G (pC)
83
1 93
308
42 6
5 45
6 64
77 9
8 90
9 99
1319
1426
1533
11 05
12 12
0
0
Q G (p C)
V
DD
= 50 V; I
D
= 170 mA; T
amb
= 25
°C.
(1) V
DS
.
(2) V
GS.
V
DD
=
−50
V; I
D
=
−115
mA; T
amb
= 25
°C.
(1) V
DS
.
(2) V
GS.
Fig.14 Gate-source voltage and drain-source voltage
as a function of total gate charge;
N-channel typical values.
Fig.15 Gate-source voltage and drain-source
voltage as a function of total gate charge;
P-channel typical values.
1997 Oct 24
9
PHILIPS [ NXP SEMICONDUCTORS ]
