Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
43
PHC2300
UNIT
K/W
10
2
handbook, full pagewidth
Rth js
(K/W)
(1)
(2)
(3)
(4)
MDA244
10
(5)
(6)
(7)
1
(8)
(9)
P
δ
=
tp
T
(10)
tp
T
10
−1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
tp (s)
1
(1)
δ
= 1.00.
(6)
δ
= 0.1.
(2)
δ
= 0.75.
(7)
δ
= 0.05.
(3)
δ
= 0.5.
(8)
δ
= 0.02.
(4)
δ
= 0.33.
(9)
δ
= 0.01.
(5)
δ
= 0.2.
(10)
δ
= 0.
Fig.5
Transient thermal resistance from junction to soldering point as a function of pulse time
for N- and P-channels; typical values.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per FET
V
(BR)DSS
drain-source breakdown voltage
N-channel
P-channel
V
GSth
gate-source threshold voltage
N-channel
P-channel
I
DSS
drain-source leakage current
N-channel
P-channel
V
GS
= 0; V
DS
= 240 V
V
GS
= 0; V
DS
=
−240
V
−
−
−
−
100
−100
nA
nA
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= V
DS
; I
D
=
−1
mA
0.8
−0.8
−
−
2
−2
V
V
V
GS
= 0; I
D
= 10
µA
V
GS
= 0; I
D
=
−10 µA
300
−300
−
−
−
−
V
V
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
1997 Oct 24
5
PHILIPS [ NXP SEMICONDUCTORS ]
