Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MDA238
MDA239
0.5
−0.5
handbook, halfpage
handbook, halfpage
I
I
SD
SD
(A)
(A)
0.4
−0.4
−0.3
−0.2
−0.1
0.3
0.2
0.1
0
0
0
0
0.2
0.4
0.6
0.8
V
1
−0.4
−0.8
−1.2
V
(V)
(V)
SD
SD
VGD = 0.
VGD = 0.
Fig.16 Source-drain current as a function of
source-drain diode forward voltage;
N-channel typical values.
Fig.17 Source-drain current as a function of
source-drain diode forward voltage;
P-channel typical values.
MDA234
MDA233
2
2
10
10
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
(4)
(5)
(1)
(2)
(3)
(4)
(5)
R
R
DSon
(Ω)
DSon
(Ω)
10
10
1
0
1
0
2
4
6
8
10
−2
−4
−6
−8
−10
(V)
V
(V)
V
GS
GS
VDS ≥ ID × RDSon; Tamb = 25 °C;
VDS ≥ ID × RDSon; Tamb = 25 °C;
(3) ID = 50 mA.
(4) ID = 100 mA.
(5) ID = 200 mA.
tp = 300 µs; δ = 0.
tp = 300 µs; δ = 0.
(3) ID = −50 mA.
(4) ID = −100 mA.
(5) D = −200 mA.
(1) ID = 10 mA.
(1) ID = −10 mA.
(2)
ID = 20 mA.
(2)
ID = −20 mA.
I
Fig.18 Drain-source on-state resistance as a
function of gate-source voltage; N-channel
typical values.
Fig.19 Drain-source on-state resistance as a
function of gate-source voltage; P-channel
typical values.
1997 Oct 24
10
NXP [ NXP ]
