Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MBH438
MRC236
1.25
1.4
handbook, halfpage
handbook, halfpage
k
k
1
1.2
0.75
0.5
1.0
0.8
0.25
0
0.6
−75
–50
0
50
100
150
−25
25
75
125
175
o
T ( C)
j
T (°C)
j
VGSth at Tj
VGSth at Tj
--------------------------------------
VGSth at 25°C
k =
k =
--------------------------------------
VGSth at 25°C
VGSth at VDS = VGS; ID = 1 mA.
VGSth at VDS = VGS; ID = −1 mA.
Fig.20 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; N-channel, typical values.
Fig.21 Temperature coefficient of gate-source
threshold voltage as function of junction
temperature; P-channel typical values.
1997 Oct 24
11
NXP [ NXP ]
