Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
SYMBOL
PARAMETER
CONDITIONS
VGS = ±20 V; VDS = 0
MIN. TYP. MAX. UNIT
IGSS
gate leakage current
N-channel
−
−
−
−
±100 nA
±100 nA
P-channel
RDSon
drain-source on-state resistance
N-channel
V
GS = 10 V; ID = 170 mA
−
−
−
−
8
Ω
Ω
P-channel
VGS = −10 V; ID = − 115 mA
17
Ciss
input capacitance
N-channel
V
GS = 0; VDS = 50 V; f = 1 MHz
−
−
57
45
−
−
pF
pF
P-channel
VGS = 0; VDS = −50 V; f = 1 MHz
Coss
Crss
QG
output capacitance
N-channel
V
GS = 0; VDS = 50 V; f = 1 MHz
−
−
15
15
−
−
pF
pF
P-channel
VGS = 0; VDS = −50 V; f = 1 MHz
reverse transfer capacitance
N-channel
VGS = 0; VDS = 50 V; f = 1 MHz
−
−
2.6
3
−
−
pF
pF
P-channel
VGS = 0; VDS = −50 V; f = 1 MHz
total gate charge
N-channel
VGS = 10 V; VDS = 50 V; ID = 170 mA
−
−
2097
2137
−
−
pC
pC
P-channel
VGS = −10 V; VDS = −50 V; ID = −115 mA
QGS
gate-source charge
N-channel
V
GS = 10 V; VDS = 50 V; ID = 170 mA
−
−
75
68
−
−
pC
pC
P-channel
VGS = −10 V; VDS = −50 V; ID = −115 mA
QGD
gate-drain charge
N-channel
VGS = 10 V; VDS = 50 V; ID = 170 mA
GS = −10 V; VDS = −50 V; ID = −115 mA
−
−
527
674
−
−
pC
pC
P-channel
V
Switching times
ton turn-on time
N-channel
VGS = 0 to 10 V; VDD = 50 V;
ID = 170 mA
−
−
2.5
4
10
10
ns
ns
P-channel
VGS = 0 to −10 V; VDD = −50 V;
ID = −115 mA
toff
turn-off time
N-channel
V
GS = 10 to 0 V; VDD = 50 V;
ID = 170 mA
GS = −10 to 0 V; VDD = −50 V;
−
−
17
25
30
35
ns
ns
P-channel
V
ID = −115 mA
1997 Oct 24
6
NXP [ NXP ]
