Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MBH439
MRC235
2.5
2.4
handbook, halfpage
handbook, halfpage
k
k
(1)
2
2.0
(2)
(2)
(1)
1.5
1
1.6
1.2
0.8
0.5
0.4
−75
0
–50
0
50
100
150
−25
25
75
125
175
o
T
( C)
j
T (°C)
j
RDSon at Tj
RDSon at Tj
k =
k =
-----------------------------------------
-----------------------------------------
RDSon at 25 °C
RDSon at 25 °C
(1) RDSon at VGS = 10 V; ID = 250 mA.
(2) RDSon at VGS = 2.4 V; ID = 20 mA.
(1) RDSon at VGS = -4.5 V; ID = −80 mA.
(2) RDSon at VGS = -2.8 V; ID = −50 mA.
Fig.22 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; N-channel typical values.
Fig.23 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; P-channel typical values.
1997 Oct 24
12
NXP [ NXP ]
