Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
FEATURES
•
High-speed switching
•
No secondary breakdown.
APPLICATIONS
•
Universal line interface in telephone sets
•
Relay, high-speed and line transformer drivers.
DESCRIPTION
One N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
8
PHC2300
PINNING - SOT96-1 (SO8)
PIN
1
2
3
4
5
6
7
8
SYMBOL
s
1
g
1
s
2
g
2
d
2
d
2
d
1
d
1
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
handbook, halfpage
d1 d1
5
d2 d2
1
4
s1
g1
s2
g2
MAM118
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
Per FET
V
DS
drain-source voltage (DC)
N-channel
P-channel
V
GS
V
GSth
gate-source voltage (DC)
gate-source threshold voltage
N-channel
P-channel
I
D
drain current (DC)
N-channel
P-channel
R
DSon
drain-source on-state resistance
N-channel
P-channel
P
tot
total power dissipation
V
GS
= 10 V; I
D
= 170 mA
V
GS
=
−10
V; I
D
=
−115
mA
T
s
= 80
°C
−
−
−
8
17
1.6
Ω
Ω
W
V
DS
= V
GS;
I
D
= 1 mA
V
DS
= V
GS
; I
D
=
−1
mA
T
s
= 80
°C
−
−
340
−235
mA
mA
0.8
−0.8
2
−2
−
−
−
300
−300
±20
V
V
V
V
V
V
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1997 Oct 24
2
PHILIPS [ NXP SEMICONDUCTORS ]
