ISP1362
Single-chip USB OTG controller
Philips Semiconductors
20. Dynamic characteristics
Table 148: Dynamic characteristics
VCC = 3.0 V to 3.6 V; GND = 0 V; Tamb = −40 °C to +85 °C; unless otherwise specified.
Symbol
Reset
Parameter
Conditions
Min
Typ
Max
Unit
tW(RESET)
pulse width on input RESET
crystal oscillator running
10
-
-
-
-
-
ms
ms
[1]
[2]
crystal oscillator
stopped
Crystal oscillator
fXTAL crystal frequency
RS
-
-
-
12
-
-
MHz
Ω
series resistance
load capacitance
100
-
CLOAD
CX1, CX2 = 22 pF
12
pF
External clock input
J
external clock jitter
-
-
500
55
3
ps
%
tDUTY
tCR, tCF
clock duty cycle
45
-
50
-
rise time and fall time
ns
[1] Dependent on the crystal oscillator start-up time.
[2] Tolerance of the clock frequency is ±50 ppm.
Table 149: Dynamic characteristics: analog I/O lines (D+, D−)[1]
VCC = 3.0 V to 3.6 V; GND = 0 V; Tamb = −40 °C to +85 °C; CL = 50 pF; RPU = 1.5 kΩ ± 5 % on DP to VTERM; unless
otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Driver characteristics
tFR
rise time
CL = 50 pF;
4
-
20
ns
10% to 90% of
|VOH − VOL
|
tFF
fall time
CL = 50 pF;
4
-
20
ns
90% to 10% of
|VOH − VOL
|
[2]
FRFM
VCRS
differential rise/fall time
90
-
-
111.11
2.0
%
V
matching (tFR/tFF
)
[2][3]
output signal crossover voltage
1.3
[1] DP represents OTG_DP1 and H_DP2, and DM represents OTG_DM1 and H_DM2. Test circuit.
[2] Excluding the first transition from the idle state.
[3] Characterized only, not tested. Limits guaranteed by design.
Table 150: Dynamic characteristics: charge pump
VCC = 3.0 V to 3.6 V; GND = 0 V; Tamb = −40 °C to +85 °C; CLOAD = 2 µF; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Driver characteristics
tSTART-UP
rise time to VBUS = 4.4 V
clock period
ILOAD = 8 mA;
CLOAD = 10 µF
-
-
-
100
3
ms
tCOMP_CLK
1.5
µs
9397 750 12337
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 03 — 06 January 2004
134 of 150
NXP [ NXP ]
