ISP1362
Single-chip USB OTG controller
Philips Semiconductors
Table 147: Static characteristics: charge pump…continued
VCC = 3.0 V to 3.6 V; GND = 0 V; Tamb = −40 °C to +85 °C; CLOAD = 2 µF; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICC(cp)(susp)
suspend supply current for
charge pump
GlobalPowerDown bit of the
HcHardwareConfiguration
register is logic 0
-
-
45
µA
GlobalPowerDown bit of the
HcHardwareConfiguration
register is logic 1
-
-
15
µA
ICC(cp)
operating supply current in
charge pump mode
ATX is idle
ILOAD = 8 mA
ILOAD = 0 mA
-
-
20
mA
µA
V
-
-
300
Vth(VBUS_VLD)
Vth(SESS_END)
Vhys(SESS_END)
Vth(ASESS_VLD)
VBUS valid threshold
4.4
-
-
VBUS session end threshold
VBUS session end hysteresis
VBUS A valid threshold
0.2
-
0.8
V
-
150
-
-
mV
V
0.8
2
-
Vhys(ASESS_VLD) VBUS A valid hysteresis
Vth(BSESS_VLD) VBUS B valid threshold
Vhys(BSESS_VLD) VBUS B valid hysteresis
-
200
-
mV
V
2
-
4
-
200
75
mV
%
E
efficiency when loaded
ILOAD = 8 mA; VIN = 3 V;
see Figure 28
-
-
IVBUS(leak)
RVBUS(PU)
RVBUS(PD)
RVBUS(IDLE)
leakage current from VBUS
VBUS pull-up resistance
VBUS pull-down resistance
-
15
-
-
µA
Ω
pull to VCC when enabled
pull to GND when enabled
281
656
40
-
-
-
Ω
VBUS idle impedance for the when ID = LOW and
-
100
kΩ
A-device
DRV_VBUS = 0
RVBUS(ACTIVE)
VBUS active pull-down
impedance
when ID = HIGH and
DRV_VBUS =1
-
350
-
kΩ
9397 750 12337
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 03 — 06 January 2004
132 of 150
NXP [ NXP ]
