Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
Table 5: Characteristics
…continued
T
j
= 25
°
C unless otherwise specified
Symbol
V
SD
t
rr
Q
r
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
S
= 25 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A; dI
S
/dt =
−100
A/µs
GS
V; V
DS
= 30 V
Min
−
−
−
Typ
0.85
35
70
Max
1.2
−
−
Unit
V
ns
nC
Source-drain diode
160
ID
(A)
140
120
100
03na86
9
VGS (V) = 10
8
7
6
5
35
RDSon
(mΩ)
30
03na84
25
80
60
40
20
0
0
2
4
6
8
3
2.2
10
VDS (V)
4
20
15
10
2
4
6
8 V
10
GS (V)
T
j
= 25
°C;
t
p
= 300
µs
T
j
= 25
°C;
I
D
= 15 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03aa28
RDSon
(mΩ)
55
50
VGS(V) = 3
45
40
35
30
3.2
3.4
3.6
3.8
4
03na87
2.2
a
2
1.8
1.6
1.4
1.2
1
0.8
5
25
0.6
0.4
20
15
0
10
20
30
40
50
60
70
80 90
ID (A)
0.2
0
-60
-20
20
60
100
140
180
T (oC)
j
T
j
= 25
°C
R
DSon
a
=
---------------------------
-
R
DSon
(
25
°
C
)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 18 January 2001
6 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
