Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
100
ID
(A)
80
03na81
6
VGS
(V)
5
VDD= 14 V
03na83
60
Tj = 175 oC
40
Tj = 25 oC
20
4
3
VDD= 44 V
2
1
0
0
1
2
3
4
5
6
VGS (V)
0
0
10
20
QG (nC)
30
V
DS
= 25 V
T
j
= 25
°C;
I
D
= 25 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
100
IS
(A)
80
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03na82
60
Tj = 175 oC
40
Tj = 25 oC
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4 1.6
VSD (V)
V
GS
= 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 18 January 2001
8 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
