Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
03aa24
120
Pder (%)
03na19
120
I
der
(%)
100
100
80
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
150 175 200
Tmb (oC)
0
25
50
75
100
125
150
175 200
o
Tmb ( C)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
4.5 V
I
D
I
der
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nc03
102
RDSon = VDS/ ID
tp = 10 us
10
P
δ
=
tp
T
100 us
1 ms
D.C.
10 ms
100 ms
10
VDS (V)
tp
T
t
1
1
102
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 18 January 2001
3 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
