Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
2.5
V
GS(th)
(V)
max
03aa33
10-1
I
D
03aa36
2
typ
(A)
10-2
1.5
min
10-3
min
typ
max
1
10-4
0.5
10-5
0
-60
-20
20
60
100
140
180
T (oC)
j
10-6
0
0.5
1
1.5
2
V
2.5
GS
(V)
3
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
°C;
V
DS
= V
GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
35
gfs
(S)
30
25
20
15
10
5
0
0
20
40
60
ID (A) 80
03na85
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
3500
C (pF)
3000
2500
2000
1500
Ciss
1000
500
0
Coss
Crss
10
102
VDS (V)
03na88
10-2
10-1
1
T
j
= 25
°C;
V
DS
= 25 V
V
GS
= 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 18 January 2001
7 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
