NXP Semiconductors
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
10
I
D
(A)
1
aaa-000157
(1)
10
-1
(2)
(3)
(4)
(5)
10
-2
10
-3
10
-1
1
10
V
DS
(V)
10
2
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) t
p
= 100 ms
(4) DC; T
sp
= 25 °C
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to solder
point
Conditions
in free air
Min
-
-
-
Typ
310
260
-
Max
370
300
115
Unit
K/W
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
BSS138BK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 4 August 2011
4 of 16
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