NXP Semiconductors
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
0.6
I
D
(A)
0.4
(1)
aaa-000162
2
a
1.5
aaa-000163
(2)
1
0.2
0.5
(2)
(1)
0
0
1.0
2.0
V
GS
(V)
3.0
0
-60
0
60
120
T
j
= (°C)
180
V
DS
> I
D
x R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
10
2
(1)
aaa-000165
2
V
GS(th)
(V)
1.5
aaa-000164
C
(pF)
(1)
(2)
1
10
(3)
(2)
0.5
0
-60
(3)
0
60
120
T
j
(°C)
180
1
10
-1
1
10
V
DS
(V)
10
2
I
D
= 0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BSS138BK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 4 August 2011
8 of 16
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