NXP Semiconductors
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
I
GSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 350 mA; T
j
= 25 °C
V
GS
= 10 V; I
D
= 350 mA; T
j
= 150 °C
V
GS
= 4.5 V; I
D
= 200 mA; T
j
= 25 °C
V
GS
= 2.5 V; I
D
= 10 mA; T
j
= 25 °C
g
fs
forward
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
I
S
= 300 mA; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 40 V; R
L
= 250
Ω;
V
GS
= 10 V;
R
G(ext)
= 6
Ω;
T
j
= 25 °C
V
DS
= 10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
V
DS
= 10 V; I
D
= 200 mA; T
j
= 25 °C
Min
60
0.48
-
-
-
-
-
-
-
-
-
-
-
Typ
-
1.1
-
-
-
-
-
-
1
2
1.1
1.4
700
Max
-
1.6
1
10
10
10
1
1
1.6
3.2
2.2
6.5
-
Unit
V
V
µA
µA
µA
µA
µA
µA
Ω
Ω
Ω
Ω
mS
Static characteristics
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
V
DS
= 30 V; I
D
= 300 mA; V
GS
= 4.5 V;
T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
0.47
0.6
0.1
0.2
42
7
4
5
5
38
20
0.8
0.7
-
-
56
-
-
10
-
76
-
1.2
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
Source-drain diode
BSS138BK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 4 August 2011
6 of 16
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