SO
T2
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 4 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
3
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1.5 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 350 mA;
T
j
= 25 °C
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
1
Max
60
20
360
1.6
Unit
V
V
mA
Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
PHILIPS [ NXP SEMICONDUCTORS ]
