NXP Semiconductors
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
10
V
GS
(V)
8
aaa-000166
V
DS
I
D
V
GS(pl)
6
V
GS(th)
4
V
GS
Q
GS1
2
Q
GS2
Q
GD
Q
G(tot)
003aaa508
Q
GS
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q
G
(nC)
I
D
= 0.3 A; V
DS
= 30 V; T
amb
= 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
0.4
I
S
(A)
0.3
Fig 15. Gate charge waveform definitions
aaa-000167
(1)
(2)
0.2
0.1
0
0
0.4
0.8
V
SD
(V)
1.2
V
GS
= 0 V
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
BSS138BK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 4 August 2011
9 of 16
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