Philips Semiconductors
Product specification
VHF power transistor
BLV25
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V
BE = 0; IC = 50 mA
V(BR)CES
V(BR)CEO
>
>
65 V
33 V
open base; IC = 200 mA
Emitter-base breakdown voltage
open collector; IE = 20 mA
Collector cut-off current
V(BR)EBO
>
<
4 V
VBE = 0; VCE = 33 V
ICES
25 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
ESBO
ESBR
>
>
20 mJ
20 mJ
RBE = 10 Ω
D.C. current gain(1)
typ.
typ.
50
IC = 8,5 A; VCE = 25 V
hFE
15 to 100
Collector-emitter saturation voltage(1)
IC = 20 A; IB = 4,0 A
VCEsat
1,6 V
Transition frequency at f = 100 MHz(2)
−IE = 8,5 A; VCB = 25 V
fT
fT
typ.
typ.
600 MHz
600 MHz
−IE = 20 A; VCB = 25 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Cc
typ.
275 pF
Feedback capacitance at f = 1 MHz
IC = 100 mA; VCE = 25 V
Cre
Ccf
typ.
typ.
155 pF
3 pF
Collector-flange capacitance
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
August 1986
4
NXP [ NXP ]
