Philips Semiconductors
Product specification
VHF power transistor
BLV25
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.
• internally matched input for
wideband operation and high
power gain;
• multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;
• gold-metallization ensures
excellent reliability.
The transistor has a 1⁄2in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit.
VCE
V
f
PL
W
PS
W
Gp
dB
η
%
MODE OPERATION
MHz
narrow band; c.w.
28
108
175
< 17,5
> 10,0
> 65
PIN CONFIGURATION
PINNING
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
handbook, halfpage
emitter
base
1
2
4
6
collector
emitter
emitter
3
5
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
NXP [ NXP ]
