NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
FEATURES
•
Small plastic SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage: max. 90 V
•
Repetitive peak reverse voltage: max. 110 V
•
Repetitive peak forward current: max. 600 mA
•
Repetitive peak reverse current: max. 600 mA.
APPLICATIONS
•
General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
3
handbook, halfpage
2
BAS29; BAS31; BAS35
PINNING
DESCRIPTION
PIN
BAS29
1
2
3
anode
cathode
BAS31
anode
common
connection
BAS35
cathode (k1)
cathode (k2)
common
anode
not connected cathode
1
2
3
3
a. Simplified outline.
c. BAS31 diode.
1
2
n.c.
1
2
3
d. BAS35 diode.
1
TYPE NUMBER
BAS29
BAS31
BAS35
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
MARKING
CODE
b. BAS29 diode.
L20 or
∗A8
L21 or
∗V1
L22 or
∗V2
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
2003 Mar 20
2
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