NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
−
−
MAX.
UNIT
110
90
250
150
600
V
V
mA
mA
mA
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
−
−
−
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t=1s
−
−
−
−
−
−
−65
−
10
4
0.75
250
600
5
+150
150
A
A
A
mW
mA
mJ
°C
°C
P
tot
I
RRM
E
RRM
T
stg
T
j
Note
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
t
p
≥
50
µs;
f
≤
20 Hz; T
j
= 25
°C
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
PHILIPS [ NXP SEMICONDUCTORS ]
