NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA
I
R
reverse current
see Fig.5
V
R
= 90 V
V
R
= 90 V; T
j
= 150
°C
V
(BR)R
C
d
t
rr
reverse avalanche breakdown
voltage
diode capacitance
reverse recovery time
I
R
= 1 mA
f = 1 MHz; V
R
= 0; see Fig.6
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
MAX.
UNIT
−
−
−
−
−
−
−
120
−
−
750
840
900
1
1.25
100
100
170
35
50
mV
mV
mV
V
V
nA
µA
V
pF
ns
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured
at I
R
= 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2003 Mar 20
4
PHILIPS [ NXP SEMICONDUCTORS ]
