NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
GRAPHICAL DATA
MBG440
BAS29; BAS31; BAS35
handbook, halfpage
300
handbook, halfpage
600
MBH280
IF
(mA)
200
(1)
IF
(mA)
400
(1)
(2)
(3)
100
(2)
200
0
0
100
Tamb (
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBH327
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5