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BAS31T/R 参数 Datasheet PDF下载

BAS31T/R图片预览
型号: BAS31T/R
PDF下载: 下载PDF文件 查看货源
内容描述: [DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode]
分类和应用: 局域网光电二极管
文件页数/大小: 9 页 / 75 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
GRAPHICAL DATA
MBG440
BAS29; BAS31; BAS35
handbook, halfpage
300
handbook, halfpage
600
MBH280
IF
(mA)
200
(1)
IF
(mA)
400
(1)
(2)
(3)
100
(2)
200
0
0
100
Tamb (
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBH327
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5