NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
10
2
handbook, halfpage
IR
(µA)
10
MBH282
MGD003
handbook, halfpage
40
Cd
(pF)
30
1
(1)
(2)
20
10
−1
10
10
−2
0
100
Tj (
o
C)
200
0
0
10
20
VR (V)
30
(1) V
R
= 90 V; maximum values.
(2) V
R
= 90 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R i = 50
Ω
VR
90%
tp
t
RS = 50
Ω
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
(1) I
R
= 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
6