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BAS31T/R 参数 Datasheet PDF下载

BAS31T/R图片预览
型号: BAS31T/R
PDF下载: 下载PDF文件 查看货源
内容描述: [DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode]
分类和应用: 局域网光电二极管
文件页数/大小: 9 页 / 75 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
10
2
handbook, halfpage
IR
(µA)
10
MBH282
MGD003
handbook, halfpage
40
Cd
(pF)
30
1
(1)
(2)
20
10
−1
10
10
−2
0
100
Tj (
o
C)
200
0
0
10
20
VR (V)
30
(1) V
R
= 90 V; maximum values.
(2) V
R
= 90 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R i = 50
VR
90%
tp
t
RS = 50
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
(1) I
R
= 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
6