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74AHC1G86GW 参数 Datasheet PDF下载

74AHC1G86GW图片预览
型号: 74AHC1G86GW
PDF下载: 下载PDF文件 查看货源
内容描述: 2输入异或门 [2-input EXCLUSIVE-OR gate]
分类和应用:
文件页数/大小: 16 页 / 77 K
品牌: NXP [ NXP ]
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Philips Semiconductors  
Product specification  
2-input EXCLUSIVE-OR gate  
74AHC1G86; 74AHCT1G86  
FEATURES  
DESCRIPTION  
Symmetrical output impedance  
High noise immunity  
The 74AHC1G/AHCT1G86 is a high-speed Si-gate CMOS  
device.  
The 74AHC1G/AHCT1G86 provides the 2-input  
EXCLUSIVE-OR function.  
ESD protection:  
– HBM EIA/JESD22-A114-A exceeds 2000 V  
– MM EIA/JESD22-A115-A exceeds 200 V  
– CDM EIA/JESD22-C101 exceeds 1000 V.  
Low power dissipation  
Balanced propagation delays  
Very small 5-pin package  
Output capability: standard  
Specified from 40 to +125 °C.  
QUICK REFERENCE DATA  
Ground = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.  
TYPICAL  
SYMBOL  
PARAMETER  
CONDITIONS  
UNIT  
ns  
AHC1G AHCT1G  
tPHL/tPLH propagation delay A and B to Y  
CL = 15 pF; VCC = 5 V  
3.4  
3.5  
1.5  
11  
CI  
input capacitance  
1.5  
9
pF  
pF  
CPD  
power dissipation capacitance  
CL = 50 pF; f = 1 MHz;  
notes 1 and 2  
Notes  
1. CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in Volts.  
2. The condition is VI = GND to VCC  
.
2002 Jun 06  
2
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