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NTZD3155CT2G 参数 Datasheet PDF下载

NTZD3155CT2G图片预览
型号: NTZD3155CT2G
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号MOSFET互补20 V 540毫安/ -430毫安,具有ESD保护, SOT- 563封装。 [Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 112 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTZD3155C
P-CHANNEL TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1
V
GS
= -2 V
V
GS
= -1.8 V
T
J
= 25°C
-I
D,
DRAIN CURRENT (A)
-1.6 V
1
V
DS
-10 V
0.8
-I
D,
DRAIN CURRENT (A)
0.8
0.6
-1.4 V
0.4
-1.2 V
0.2
-1 V
0
0
1
2
3
4
5
6
7
8
9
10
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0.6
0.4
T
J
= -55°C
25°C
0
0
100°C
0.5
1
1.5
2
-V
GS
, GATE-T O-SOURCE VOLTAGE (V)
2.5
0.2
Figure 1. On-Region Characteristics
R
DS(on),
DRAIN-T O-SOURCE RESISTANCE (W)
R
DS(on),
DRAIN-T O-SOURCE RESISTANCE (W)
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
1
3
5
4
-V
GS
, GATE-T O-SOURCE VOLTAGE (V)
2
6
I
D
= -0.43 A
T
J
= 25°C
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.1
0.2
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= -1.8 V
V
GS
= -2.5 V
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
-I
D,
DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.6
R
DS(on),
DRAIN-T O-SOURCE
RESISTANCE (NORMALIZED)
I
D
= -0.43 A
V
GS
= -4.5 V
-I
DSS
, LEAKAGE (nA)
1.4
10000
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
1.2
1
T
J
= 100°C
100
0.8
0.6
-50
10
-25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
http://onsemi.com
6